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| CMDSH-4E ENHANCED SPECIFICATION SCHOTTKY DIODE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-4E is an Enhanced version of the CMDSH-3 Silicon Schottky Diode in an SOD-323 Surface Mount Package. ENHANCED SPECIFICATIONS: IO from 100 mA max to 200 mA max. SOD-323 CASE BVR from 30V min to 40 V min. VF from 1.0 V max to 0.8 V max. MARKING CODE: S1E MAXIMUM RATINGS: (TA=25C) SYMBOL VRRM IO IFRM IFSM PD TJ, Tstg JA (TA=25C unless otherwise noted) MIN 40 UNITS V mA mA mA mW C C/W Peak Repetitive Reverse Voltage Average Forward Current Peak Repetitive Forward Voltage Forward Surge Current, tp=10ms Power Dissipation Operating and Storage Junction Temperature Thermal Resistance 40 200 350 750 250 -65 to +150 500 ELECTRICAL CHARACTERISTICS: SYMBOL TEST CONDITIONS IR=100A IF=2.0mA IF=15mA IF=100mA IF=200mA VR=25V VR=25V, TA=100C VR=1.0V, f=1 MHz TYP 50 0.29 0.37 0.61 0.65 90 25 7.0 MAX UNITS V V V V V nA A pF ns BVR VF VF VF VF 0.33 0.42 0.80 1.0 500 100 5.0 IR IR CT trr IF=IR=10mA, Irr=1.0mA, RL=100 Enhanced specification. Additional Enhanced specification. R0 (10-May 2004) Central TM Semiconductor Corp. CMDSH-4E ENHANCED SPECIFICATION SCHOTTKY DIODE SOD-323 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode MARKING CODE: S1E R0 (10-May 2004) |
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